BC238 – NPN Transistor – 20 V
- Type: NPN
- Collector-Emitter Voltage: 25 V
- Collector-Base Voltage: 30 V
- Emitter-Base Voltage: 5 V
- Collector Current: 0.1 A
- Collector Dissipation: 0.5 W
- DC Current Gain (hfe): 120 to 800
- Transition Frequency: 150 MHz
- Noise Figure: 10 dB
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
Pinout of BC238
The BC238 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the collector, base, and emitter leads.
Here is an image showing the pin diagram of the this transistor.
BC238 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor’s terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.
Features:-
• Advanced process technology
• Low error voltage
• Fast switching speed
• Full-voltage operation
• High power and current handling capability
Detailed Specifications:-
Transistor Polarity | NPN |
Collector-Emitter Breakdown Voltage (BVCEO) | 25V |
Collector-Emitter Voltage (VCEO) | 25V |
Emitter-Base Voltage (VEBO) | 5V |
Continuous Collector Current (IC) | 100mA |
Output Capacitance (Cobo) | 6pF |
Transition Frequency (fT) | 250MHz |
DC Current Gain (hFE) | 120-800 |
Operating Temperature Range | -55 – 150°C |
Power Dissipation (PD) | 500mW |
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